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dc.contributor.authorMartínez Boubeta, Carlos-
dc.contributor.authorCebollada, Alfonso-
dc.contributor.authorCalleja, J. F.-
dc.contributor.authorContreras, M. C.-
dc.contributor.authorPeiró, F.-
dc.contributor.authorCornet, Albert-
dc.date.accessioned2010-06-07T10:49:14Z-
dc.date.available2010-06-07T10:49:14Z-
dc.date.issued2003-02-15-
dc.identifier.citationJournal of Applied Physics 93, 2126 (2003)en_US
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10261/25048-
dc.description.abstractEpitaxial Fe/MgO heterostructures have been grown on Si(001) by a combination of sputtering and laser ablation deposition techniques. The growth of MgO on Si(001) is mainly determined by the nature of the interface, with large lattice mismatch and the presence of an amorphous layer of unclear origin. Reflection high energy electron diffraction patterns of this MgO buffer layer are characteristic of an epitaxial, but disordered, structure. The structural quality of subsequent Fe and MgO layers continuously improves due to the better lattice match and the burial of defects. A weak uniaxial in-plane magnetic anisotropy is found superimposed on the expected cubic biaxial anisotropy. This additional anisotropy, of interfacial nature and often found in Fe/MgO and Fe/MgO/GaAs(001) systems, is less intense here due to the poorer MgO/Si interface quality compared with that of other systems. From the evolution of the anisotropy field with film thickness, magnetic anisotropy is also found to depend on the crystal quality. Kerr measurements of a Fe/MgO multilayered structure grown on Si show two different switching fields, suggesting magnetic coupling of two of the three Fe layers. Nevertheless, due to the little sensitivity to the bottom Fe film, independent switching of the three layers cannot be ruled out.en_US
dc.description.sponsorshipThis work was performed through financial support by the Spanish Commission of Science and Technology. The authors thank E. Navarro for the AFM measurements, and J. L. Costa-Krämer for fruitful discussions. One of the authors (C.M.B.) acknowledges the Ministerio de Ciencia y Tecnología for funding.en_US
dc.format.extent505538 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectIronen_US
dc.subjectMagnesium compoundsen_US
dc.subjectMagnetic epitaxial layersen_US
dc.subjectFerromagnetic materialsen_US
dc.subjectMagnetisation reversalen_US
dc.subjectSputtered coatingsen_US
dc.subjectPulsed laser depositionen_US
dc.titleMagnetization reversal and magnetic anisotropies in epitaxial Fe/MgO and Fe/MgO/Fe heterostructures grown on Si(001)en_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.1538317-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.1538317en_US
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairetypeartículo-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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