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Título

In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy

AutorGranados, Daniel ; García Martínez, Jorge Manuel
Palabras claveIndium compounds
Gallium arsenide
III-V semiconductors
Semiconductor quantum dots
Semiconductor growth
Molecular beam epitaxial growth
Self-assembly
Atomic force microscopy
Photoluminescence
Fecha de publicación14-feb-2003
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 82, 2401 (2003)
ResumenThe effect of growth conditions on the morphological properties of InAs/GaAs(001) quantum dots covered by a thin (<3 nm) GaAs cap has been studied by atomic force microscopy. Each dot turns into an elongated nanostructure at 540 °C upon deposition of the cap in As4 atmosphere, while structures with two humps are obtained when capping at 500 °C. The use of As2 atmosphere instead of As4 at 500 °C leads to the formation of quantum rings. Photoluminescence spectroscopy and polarization photoluminescence (PL) at 15 K show dramatic changes due to the different kinds of confinement. This allows the possibility of tailoring PL emission by controlling the size and shape.
Versión del editorhttp://dx.doi.org/10.1063/1.1566799
URIhttp://hdl.handle.net/10261/24993
DOI10.1063/1.1566799
ISSN0003-6951
Aparece en las colecciones: (IMN-CNM) Artículos
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