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dc.contributor.author | Fadaly, Elham M. T. | es_ES |
dc.contributor.author | Marzegalli, Anna | es_ES |
dc.contributor.author | Ren, Yizhen | es_ES |
dc.contributor.author | Sun, Lin | es_ES |
dc.contributor.author | Dijkstra, Alain | es_ES |
dc.contributor.author | Matteis, Diego de | es_ES |
dc.contributor.author | Scalise, Emilio | es_ES |
dc.contributor.author | Sarikov, Andrey | es_ES |
dc.contributor.author | Luca, Marta De | es_ES |
dc.contributor.author | Rurali, Riccardo | es_ES |
dc.contributor.author | Zardo, Ilaria | es_ES |
dc.contributor.author | Haverkort, Jos E. M. | es_ES |
dc.contributor.author | Botti, Silvana | es_ES |
dc.contributor.author | Miglio, Leo | es_ES |
dc.contributor.author | Bakkers, Erik P. A. M. | es_ES |
dc.date.accessioned | 2021-06-16T10:00:33Z | - |
dc.date.available | 2021-06-16T10:00:33Z | - |
dc.date.issued | 2021-04-28 | - |
dc.identifier.citation | Nano Letters 21(8): 3619-3625 (2021) | es_ES |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10261/243710 | - |
dc.description.abstract | Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present. | es_ES |
dc.description.sponsorship | This project has received funding from the European Union’s Horizon 2020 research and innovation program under Grant agreement no. 735008 (SiLAS). I.Z. acknowledges financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (Grant agreement no. 756365). M.D.L. acknowledges support from the Swiss National Science Foundation Ambizione grant (Grant no. PZ00P2_179801). R.R. acknowledges financial support by the Ministerio de Economía, Industria y Competitividad (MINECO) under Grant FEDER-MAT2017–90024-P, by the Severo Ochoa Centres of Excellence Program under Grant SEV-2015–049,6 and by the Generalitat de Catalunya under Grant no. 2017 SGR 1506. L.S. acknowledges financial support from the China Scholarship Council. S.B. acknowledges funding from the Volkswagen Stiftung (Momentum) through the project “Dandelion” and the DFG through projects SFB-1375 and BO4280/8-1. Computational resources were also provided by the Leibniz Supercomputing Center through projects pr48je and pr62ja. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | American Chemical Society | es_ES |
dc.relation | info:eu-repo/grantAgreement/EC/H2020/735008 | es_ES |
dc.relation | info:eu-repo/grantAgreement/EC/H2020/756365 | es_ES |
dc.relation | info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/MAT2017–90024-P, | es_ES |
dc.relation | info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496 | es_ES |
dc.relation.isversionof | Publisher's version | es_ES |
dc.rights | openAccess | es_ES |
dc.subject | Nanowires | es_ES |
dc.subject | Hexagonal group IV | es_ES |
dc.subject | Hexagonal Ge | es_ES |
dc.subject | Hexagonal Si I3 basal stacking fault | es_ES |
dc.subject | Defects | es_ES |
dc.title | Unveiling Planar Defects in Hexagonal Group IV Materials | es_ES |
dc.type | artículo | es_ES |
dc.description.peerreviewed | Peer reviewed | es_ES |
dc.relation.publisherversion | http://dx.doi.org/10.1021/acs.nanolett.1c00683 | es_ES |
dc.rights.license | https://creativecommons.org/licenses/by-nc-nd/4.0/ | es_ES |
dc.contributor.funder | European Commission | es_ES |
dc.contributor.funder | European Research Council | es_ES |
dc.contributor.funder | Swiss National Science Foundation | es_ES |
dc.contributor.funder | Ministerio de Economía, Industria y Competitividad (España) | es_ES |
dc.contributor.funder | Generalitat de Catalunya | es_ES |
dc.contributor.funder | China Scholarship Council | es_ES |
dc.contributor.funder | Volkswagen Foundation | es_ES |
dc.contributor.funder | German Research Foundation | es_ES |
dc.contributor.funder | Leibniz Supercomputing Centre | es_ES |
dc.relation.csic | Sí | es_ES |
oprm.item.hasRevision | no ko 0 false | * |
dc.identifier.funder | http://dx.doi.org/10.13039/501100004543 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100010198 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100000780 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100000781 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100002809 | es_ES |
dc.identifier.funder | http://dx.doi.org/10.13039/501100001659 | es_ES |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.openairetype | artículo | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
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Fadaly-NanoLett_2021_editorial.pdf | Artículo principal | 3,61 MB | Adobe PDF | Visualizar/Abrir |
Fadaly-NanoLett_2021_suppl_editorial.pdf | Información complementaria | 4,09 MB | Adobe PDF | Visualizar/Abrir |
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