Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/242923
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions |
Autor: | Díaz-Fortuny, Javier; Saraza-Canflanca, P. CSIC ORCID; Rodríguez, Rosana; Martín-Martínez, Javier; Castro-López, R. CSIC ORCID ; Roca, Elisenda CSIC ORCID ; Fernández, Francisco V. CSIC ORCID; Nafría, Montserrat | Palabras clave: | CMOS BTI HCI Parameters Extraction Method RTN Defects Aging |
Fecha de publicación: | 2021 | Editor: | Elsevier | Citación: | Solid-State Electronics, 185: 108037 (2021) | Resumen: | In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have become important concerns for analog and digital circuit design. For instance, transistor parameter shifts caused by Bias Temperature Instability and Hot-Carrier Injection phenomena can lead to progressive deviations of the circuit performance or even to its catastrophic failure. In this scenario, and to understand the effects of these variability sources, an extensive and accurate device characterization under several test conditions has become an unavoidable step towards trustworthy implementing the stochastic reliability models and simulation tools needed to achieve reliable integrated circuits. In this paper, the statistical distributions of threshold voltage shifts in nanometric CMOS transistors will be studied at nominal and accelerated aging conditions. To this end, a versatile transistor array chip and a flexible measurement setup have been used to reduce the required testing time to attainable values. | Versión del editor: | https://doi.org/10.1016/j.sse.2021.108037 | URI: | http://hdl.handle.net/10261/242923 | DOI: | 10.1016/j.sse.2021.108037 |
Aparece en las colecciones: | (IMSE-CNM) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
SSE_Javier_Diaz_Fortuny_Statistical threshold voltage_FINAL_SUBMITTED.pdf | 1,68 MB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
SCOPUSTM
Citations
6
checked on 11-abr-2024
WEB OF SCIENCETM
Citations
3
checked on 28-feb-2024
Page view(s)
616
checked on 21-abr-2024
Download(s)
39
checked on 21-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.