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Campo DC | Valor | Lengua/Idioma |
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dc.contributor.author | Fuster, David | - |
dc.contributor.author | González Sagardoy, María Ujué | - |
dc.contributor.author | González Sotos, Luisa | - |
dc.contributor.author | González Díez, Yolanda | - |
dc.contributor.author | Ben, Teresa | - |
dc.contributor.author | Ponce, Arturo | - |
dc.contributor.author | Molina, Sergio I. | - |
dc.date.accessioned | 2010-05-13T09:46:48Z | - |
dc.date.available | 2010-05-13T09:46:48Z | - |
dc.date.issued | 2004-06-20 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10261/24259 | - |
dc.description.abstract | Size and spatial distribution homogeneity of nanostructures is greatly improved by making stacks of nanostructures separated by thin spacers. In this work, we present in situ and in real time stress measurements and reflection high-energy electron diffraction observations and ex situ transmission electron microscopy (TEM) characterization of stacked layers of InAs quantum wires (QWRs) separated by InP spacer layers, d(InP), of thickness between 3 and 20 nm. For d(InP)<20 nm, the amount of InAs involved in the created QWR from the second stack layer on, exceeds that provided by the In cell. Our results suggest that in those cases InAs three dimensional islands formation starts at the P/As switching and lasts during further InAs deposition. We propose an explanation for this process that is strongly supported on TEM observations. The results obtained in this work imply that concepts like the existence of a critical thickness for two- to three-dimensional growth mode transition should be revised in correlated QWR stacks of layers. | en_US |
dc.description.sponsorship | This work was financed by Spanish MCyT under NANOSELF project (TIC2002-04096), by NANOMAT project of the EC Growth Program (No. G5RD-CT-2001-00545) by Junta de Andalucía (TEP-0120). TEM measurements were carried out in the DME-SCCYT and UCM. | en_US |
dc.format.extent | 256762 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | openAccess | en_US |
dc.subject | Indium compounds | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | Nanostructured materials | en_US |
dc.subject | Semiconductor quantum wires | en_US |
dc.subject | Internal stresses | en_US |
dc.subject | Multilayers | en_US |
dc.subject | Island structure | en_US |
dc.subject | High energy electron diffraction | en_US |
dc.subject | Transmission electron microscopy | en_US |
dc.title | Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields | en_US |
dc.type | artículo | en_US |
dc.identifier.doi | 10.1063/1.1759374 | - |
dc.description.peerreviewed | Peer reviewed | en_US |
dc.relation.publisherversion | http://dx.doi.org/10.1063/1.1759374 | en_US |
dc.type.coar | http://purl.org/coar/resource_type/c_6501 | es_ES |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.languageiso639-1 | en | - |
item.fulltext | With Fulltext | - |
item.openairetype | artículo | - |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fuster, David et al Appl.Phys.Lett._84_2004.pdf | 250,74 kB | Adobe PDF | Visualizar/Abrir |
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