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Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

AutorFuster, David ; González Sagardoy, María Ujué ; González Sotos, Luisa ; González Díez, Yolanda ; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.
Palabras claveIndium compounds
III-V semiconductors
Nanostructured materials
Semiconductor quantum wires
Internal stresses
Island structure
High energy electron diffraction
Transmission electron microscopy
Fecha de publicación20-jun-2004
EditorAmerican Institute of Physics
ResumenSize and spatial distribution homogeneity of nanostructures is greatly improved by making stacks of nanostructures separated by thin spacers. In this work, we present in situ and in real time stress measurements and reflection high-energy electron diffraction observations and ex situ transmission electron microscopy (TEM) characterization of stacked layers of InAs quantum wires (QWRs) separated by InP spacer layers, d(InP), of thickness between 3 and 20 nm. For d(InP)<20 nm, the amount of InAs involved in the created QWR from the second stack layer on, exceeds that provided by the In cell. Our results suggest that in those cases InAs three dimensional islands formation starts at the P/As switching and lasts during further InAs deposition. We propose an explanation for this process that is strongly supported on TEM observations. The results obtained in this work imply that concepts like the existence of a critical thickness for two- to three-dimensional growth mode transition should be revised in correlated QWR stacks of layers.
Versión del editorhttp://dx.doi.org/10.1063/1.1759374
Aparece en las colecciones: (IMN-CNM) Artículos
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