English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/24259
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
Citado 28 veces en Web of Knowledge®  |  Ver citas en Google académico
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Título

Stacking of InAs/InP(001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

AutorFuster, David ; González Sagardoy, María Ujué ; González Sotos, Luisa ; González Díez, Yolanda ; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.
Palabras claveIndium compounds
III-V semiconductors
Nanostructured materials
Semiconductor quantum wires
Internal stresses
Multilayers
Island structure
High energy electron diffraction
Transmission electron microscopy
Fecha de publicación20-jun-2004
EditorAmerican Institute of Physics
ResumenSize and spatial distribution homogeneity of nanostructures is greatly improved by making stacks of nanostructures separated by thin spacers. In this work, we present in situ and in real time stress measurements and reflection high-energy electron diffraction observations and ex situ transmission electron microscopy (TEM) characterization of stacked layers of InAs quantum wires (QWRs) separated by InP spacer layers, d(InP), of thickness between 3 and 20 nm. For d(InP)<20 nm, the amount of InAs involved in the created QWR from the second stack layer on, exceeds that provided by the In cell. Our results suggest that in those cases InAs three dimensional islands formation starts at the P/As switching and lasts during further InAs deposition. We propose an explanation for this process that is strongly supported on TEM observations. The results obtained in this work imply that concepts like the existence of a critical thickness for two- to three-dimensional growth mode transition should be revised in correlated QWR stacks of layers.
Versión del editorhttp://dx.doi.org/10.1063/1.1759374
URIhttp://hdl.handle.net/10261/24259
DOI10.1063/1.1759374
ISSN0003-6951
Aparece en las colecciones: (IMN-CNM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
Fuster, David et al Appl.Phys.Lett._84_2004.pdf250,74 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 



NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.