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Título: | Polymorphism in non-fullerene acceptors based on indacenodithienothiophene |
Autor: | Marina, Sara; Scaccabarozzi, Alberto D.; Gutiérrez-Fernández, Edgar CSIC ORCID; Solano, Eduardo; Khirbat, Aditi; Ciammaruchi, Laura; Iturrospe, Amaia CSIC ORCID; Balzer, Alex; Yu, Liyang; Gabirondo, Elena; Monnier, Xavier; Sardón, Haritz; Anthopoulos, Thomas D.; Caironi, Mario; Campoy Quiles, Mariano CSIC ORCID ; Müller, Christian; Cangialosi, Daniele CSIC ORCID ; Stingelin, Natalie; Martín, Jaime CSIC ORCID | Palabras clave: | Organic Electronics NFAs Polimorphism Organic solar cells Organic Semiconductors |
Fecha de publicación: | 13-may-2021 | Editor: | Wiley-VCH | Citación: | Advanced Functional Materials 31(29): 2103784 (2021) | Resumen: | Organic solar cells incorporating non-fullerene acceptors (NFAs) have reached remarkable power conversion efficiencies of over 18%. Unlike fullerene derivatives, NFAs tend to crystallize from solutions, resulting in bulk heterojunctions that include a crystalline acceptor phase. This must be considered in any morphology-function models. Here, it is confirmed that high-performing solution-processed indacenodithienothiophene-based NFAs, i.e., ITIC and its derivatives ITIC-M, ITIC-2F, and ITIC-Th, exhibit at least two crystalline forms. In addition to highly ordered polymorphs that form at high temperatures, NFAs arrange into a low-temperature metastable phase that is readily promoted via solution processing and leads to the highest device efficiencies. Intriguingly, the low-temperature forms seem to feature a continuous network that favors charge transport despite of a poorly order along the π–π stacking direction. As the optical absorption of the structurally more disordered low-temperature phase can surpass that of the more ordered polymorphs while displaying comparable—or even higher—charge transport properties, it is argued that such a packing structure is an important feature for reaching highest device efficiencies, thus, providing guidelines for future materials design and crystal engineering activities. | Versión del editor: | http://dx.doi.org/10.1002/adfm.202103784 | URI: | http://hdl.handle.net/10261/241531 | ISSN: | 1616-301X |
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