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| Título: | Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange |
Autor: | Fuster, David CSIC ORCID ; González Sagardoy, María Ujué CSIC ORCID ; González Sotos, Luisa CSIC ORCID ; González Díez, Yolanda CSIC ORCID; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.; Martínez Pastor, Juan Pascual CSIC ORCID | Palabras clave: | Semiconductor quantum wires Indium compounds Arsenic compounds Phosphorus compounds Self-assembly Size effects Surface reconstruction Optoelectronic devices Optical fibres Emission |
Fecha de publicación: | 23-ago-2004 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 85, 1424 (2004) | Resumen: | The size and emission wavelength of self-assembled InAs∕InP(001) quantum wires (QWrs) is affected by the P∕As exchange process. In this work, we demonstrate by in situ stress measurements that P∕As exchange at the InAs∕InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P∕As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55 μm at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown. | Versión del editor: | http://dx.doi.org/10.1063/1.1787155 | URI: | http://hdl.handle.net/10261/24034 | DOI: | 10.1063/1.1787155 | ISSN: | 0003-6951 |
| Aparece en las colecciones: | (IMN-CNM) Artículos |
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| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| Fuster, David et al Appl.Phys.Lett._85_2004.pdf | 206,08 kB | Adobe PDF |  Visualizar/Abrir |
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