Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange

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Title:	Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange
Authors:	Fuster, David ; González Sagardoy, María Ujué ; González Sotos, Luisa ; González Díez, Yolanda ; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.; Martínez Pastor, Juan Pascual
Keywords:	Semiconductor quantum wires Indium compounds Arsenic compounds Phosphorus compounds Self-assembly Size effect Surface reconstruction Optoelectronic devices Optical fibres Emission
Issue Date:	23-Aug-2004
Publisher:	American Institute of Physics
Citation:	Applied Physics Letters 85, 1424 (2004)
Abstract:	The size and emission wavelength of self-assembled InAs∕InP(001) quantum wires (QWrs) is affected by the P∕As exchange process. In this work, we demonstrate by in situ stress measurements that P∕As exchange at the InAs∕InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P∕As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55 μm at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown.
Publisher version (URL):	http://dx.doi.org/10.1063/1.1787155
URI:	http://hdl.handle.net/10261/24034
DOI:	10.1063/1.1787155
ISSN:	0003-6951
Appears in Collections:	(IMN-CNM) Artículos

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