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Size control of InAs∕InP(001) quantum wires by tailoring P∕As exchange

AuthorsFuster, David ; González Sagardoy, María Ujué ; González Sotos, Luisa ; González Díez, Yolanda ; Ben, Teresa; Ponce, Arturo; Molina, Sergio I.; Martínez Pastor, Juan Pascual
KeywordsSemiconductor quantum wires
Indium compounds
Arsenic compounds
Phosphorus compounds
Size effect
Surface reconstruction
Optoelectronic devices
Optical fibres
Issue Date23-Aug-2004
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 85, 1424 (2004)
AbstractThe size and emission wavelength of self-assembled InAs∕InP(001) quantum wires (QWrs) is affected by the P∕As exchange process. In this work, we demonstrate by in situ stress measurements that P∕As exchange at the InAs∕InP interface depends on the surface reconstruction of the InAs starting surface and its immediate evolution when the arsenic cell is closed. Accordingly, the amount of InP grown on InAs by P∕As exchange increases with substrate temperature in a steplike way. These results allow us to engineer the size of the QWr for emission at 1.3 and 1.55 μm at room temperature by selecting the range of substrate temperatures in which the InP cap layer is grown.
Publisher version (URL)http://dx.doi.org/10.1063/1.1787155
Appears in Collections:(IMN-CNM) Artículos
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