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Title

Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

AuthorsRodríguez-Fernández, J.; Carcelén, V.; Hidalgo, P.; Vijayan, N.; Piqueras, J.; Sochinskii, N. V.; Pérez, J. M.; Diéguez, E.
KeywordsCadmium compounds
Cathodoluminescence
Crystal growth from melt
Doping profiles
Electrical resistivity
II-VI semiconductors
Indium
Semiconductor doping
Semiconductor growth
Vacancies (crystal)
X-ray chemical analysis
Zinc compounds
Issue Date18-Aug-2009
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 106, 044901 (2009)
AbstractCadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
Publisher version (URL)http://link.aip.org
http://dx.doi.org/10.1063/1.3197031
URIhttp://hdl.handle.net/10261/23646
DOI10.1063/1.3197031
ISSN0021-8979
Appears in Collections:(IMN-CNM) Artículos

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