Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals

English español

Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/23646

COMPARTIR / IMPACTO:

Estadísticas	SHARE CORE Mendeley BASE	Comparte tu historia de Acceso Abierto
	2 citas en Web of Knowledge ® 3 citas en Scopus ® Ver citas en Google académico
	Visualizar otros formatos: MARC \| Dublin Core \| RDF \| ORE \| MODS \| METS \| DIDL
	Exportar a otros formatos:

Título:	Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
Autor:	Rodríguez-Fernández, J.; Carcelén, V.; Hidalgo, P.; Vijayan, N.; Piqueras, J.; Sochinskii, N. V.; Pérez, J. M.; Diéguez, E.
Palabras clave:	Cadmium compounds Cathodoluminescence Crystal growth from melt Doping profiles Electrical resistivity II-VI semiconductors Indium Semiconductor doping Semiconductor growth Vacancies (crystal) X-ray chemical analysis Zinc compounds
Fecha de publicación:	18-ago-2009
Editor:	American Institute of Physics
Citación:	Journal of Applied Physics 106, 044901 (2009)
Resumen:	Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values.
Versión del editor:	http://link.aip.org http://dx.doi.org/10.1063/1.3197031
URI:	http://hdl.handle.net/10261/23646
DOI:	10.1063/1.3197031
ISSN:	0021-8979
Aparece en las colecciones:	(IMN-CNM) Artículos

Fichero	Descripción	Tamaño	Formato
Rodriguez-Fernandez, J. et al J. of Appl. Phys._106_2009.pdf		171,5 kB	Adobe PDF	Visualizar/Abrir