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| Title: | Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals |
Authors: | Rodríguez-Fernández, J.; Carcelén, V.; Hidalgo, P.; Vijayan, N.; Piqueras, J.; Sochinskii, N. V.; Pérez, J. M.; Diéguez, E. | Keywords: | Cadmium compounds Cathodoluminescence Crystal growth from melt Doping profiles Electrical resistivity II-VI semiconductors Indium Semiconductor doping Semiconductor growth Vacancies (crystal) X-ray chemical analysis Zinc compounds |
Issue Date: | 18-Aug-2009 | Publisher: | American Institute of Physics | Citation: | Journal of Applied Physics 106, 044901 (2009) | Abstract: | Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 1019 at./cm3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values. | Publisher version (URL): | http://link.aip.org http://dx.doi.org/10.1063/1.3197031 |
URI: | http://hdl.handle.net/10261/23646 | DOI: | 10.1063/1.3197031 | ISSN: | 0021-8979 |
| Appears in Collections: | (IMN-CNM) Artículos |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| Rodriguez-Fernandez, J. et al J. of Appl. Phys._106_2009.pdf | 171,5 kB | Adobe PDF |  View/Open |
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