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Título

Microstructural improvements of InP on GaAs „001… grown by molecular

AutorMorales, F. M.; García García, Ricardo ; Molina, Sergio I.; Aouni, A.; Postigo, Pablo Aitor ; Fonstad, C. G.
Palabras claveDislocations
Electron diffraction
Hydrogenation
III-V semiconductors
Indium compounds
Molecular beam epitaxial growth
Rapid thermal annealing
Semiconductor epitaxial layers
Semiconductor growth
Stacking faults
Transmission electron microscopy
Fecha de publicación30-ene-2009
EditorAmerican Institute of Physics
CitaciónAppl. Phys. Lett. 94, 041919 (2009)
ResumenThe characterization of high quality InP on GaAs (001) fabricated by molecular beam epitaxy using a two-step growth method involving hydrogenation during growth is reported. Electron diffraction and high-resolution transmission electron microscopy confirm that ∼ 2 μm thick InP epilayers on GaAs are heteroepitaxial and strain relaxed. Stacking faults and threading dislocations are mostly confined near the InP/GaAs interface and their densities decrease monotonically toward the InP surface. Additionally, rapid-thermal annealing following growth is found to result in a marked reduction in the number of dislocations and the disappearance of planar defects.
Versión del editorhttp://link.aip.org
http://dx.doi.org/10.1063/1.3077610
URIhttp://hdl.handle.net/10261/23579
DOI10.1063/1.3077610
ISSN0003-6951
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