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Título

Resonant photoemission in Cr silicide at the absorption energy Cr2p

AutorGalán, L.; García, Mariano; Ripalda, José María ; Montero Herrero, Isabel; Román García, Elisa Leonor ; Batchelor, D. R.; Bressler, P. R.
Palabras claveChromium compounds
Silicon compounds
Photoemission
Valence bands
Resonance
Auger effect
Fecha de publicación31-may-2004
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters, 84, 4433 (2004
ResumenValence band photoemission has been measured in chromium silicide as a function of the photon energy near the Cr 2p3/2 absorption threshold. Evidence of resonant photoemission is observed for the 3d valence band and the two-hole satellite. The threshold for normal Auger regime is 2.8 eV below the absorption peak and 0.8 eV below the Cr 2p3/2 binding energy, even lower than in pure Cr metal where it is already at extreme levels. The requirement for good resolution in photon energy relative to absorption width for the resonant Raman Auger to be observed is found to be less restrictive than expected.
Versión del editorhttp://link.aip.org
http://dx.doi.org/10.1063/1.1758779
URIhttp://hdl.handle.net/10261/23441
DOI10.1063/1.1758779
ISSN0003-6951
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