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Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes

AuthorsMuñoz-Matutano, G.; Canet-Ferrer, J.; Alonso-González, Pablo ; Alén, Benito ; Fernández-Martínez, Iván ; Martín-Sánchez, Javier; Fuster, David ; Martínez Pastor, Juan Pascual ; González Díez, Yolanda ; Briones Fernández-Pola, Fernando ; González Sotos, Luisa
KeywordsQuantum dot molecules
Droplet epitaxi
Issue Date2010
PublisherInstitute of Physics Publishing
CitationJournal of Physics: Conference Series 210(1): 012028 (2010)
AbstractWe have studied the lateral coupling between InAs/GaAs quantum dot pairs embedded in a field-effect structure. Quantum dot pairs and molecules have been identified by the correlated evolution of the Coulomb blockade features of each QD in the pair. This behaviour is largely distorted in the presence of resonant coupling states in the QD molecule. Single QD voltage evolution shows a crossover in the lineshape profile, which is associated to Spectral Diffusion processes due to residual charged environment.
DescriptionTrabajo presentado a la "11th International Conference on Optics of Excitons in Confined Systems" (OECS), celebrada en en Madrid (España) del 7 al 11 de Septiembre de 2009.
Publisher version (URL)http://dx.doi.org/10.1088/1742-6596/210/1/012028
Appears in Collections:(IMN-CNM) Artículos
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