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Título

Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM

AutorQuirion, David; Manna, M.; Hidalgo, Salvador ; Pellegrini, Giulio CSIC ORCID
Palabras clave3D silicon detectors
Process integration
Process-induced stress
Silicon manufacturing
Radiation-hard detectors
High-energy physic experiments
Through-silicon vias
Fecha de publicación2020
EditorMultidisciplinary Digital Publishing Institute
CitaciónMicromachines 11(12): 1126 (2020)
ResumenThis paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.
Versión del editorhttps://doi.org/10.3390/mi11121126
URIhttp://hdl.handle.net/10261/225745
DOI10.3390/mi11121126
E-ISSN2072-666X
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