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Título: | Multilayer graphene films grown by Molecular Beam Deposition |
Autor: | García Martínez, Jorge Manuel CSIC ORCID CVN ; He, Rui; Jiang, Mason P.; Yanb, Jun; Pinczuk, Aron; Zuev, Yuri M.; Kimb, Keun Soo; Kim, Philip; Baldwin, Kirk; West, Ken W.; Pfeiffer, Loren N. | Palabras clave: | Graphene Crystal growth Inelastic light scattering |
Fecha de publicación: | 7-mar-2010 | Editor: | Elsevier | Citación: | Solid State Communication 150 (17-18): 809-811 (2010) | Resumen: | Few-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800–900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e-beam evaporation. The thickness of the deposited carbon layers changes continuously from 70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface. | Versión del editor: | http://dx.doi.org/10.1016/j.ssc.2010.02.029 | URI: | http://hdl.handle.net/10261/22407 | DOI: | 10.1016/j.ssc.2010.02.029 | ISSN: | 0038-1098 |
Aparece en las colecciones: | (IMN-CNM) Artículos |
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Fichero | Descripción | Tamaño | Formato | |
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Multilayer graphene MBD.pdf | 900,92 kB | Adobe PDF | Visualizar/Abrir |
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