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Título

Multilayer graphene films grown by Molecular Beam Deposition

AutorGarcía Martínez, Jorge Manuel CSIC ORCID CVN ; He, Rui; Jiang, Mason P.; Yanb, Jun; Pinczuk, Aron; Zuev, Yuri M.; Kimb, Keun Soo; Kim, Philip; Baldwin, Kirk; West, Ken W.; Pfeiffer, Loren N.
Palabras claveGraphene
Crystal growth
Inelastic light scattering
Fecha de publicación7-mar-2010
EditorElsevier
CitaciónSolid State Communication 150 (17-18): 809-811 (2010)
ResumenFew-layer graphene films are grown using a Molecular Beam Deposition (MBD) technique in ultra-high vacuum by evaporation of atomic carbon and subsequent annealing of the samples at 800–900 °C. The graded thickness layers are grown on strip-shaped oxidized silicon substrates which are covered with 300 nm thick nickel films deposited by e-beam evaporation. The thickness of the deposited carbon layers changes continuously from 70 Å to less than 4 Å. The relatively narrow optical phonon bands in Raman spectroscopy reveal that good quality multilayer graphene films form on the Ni surface.
Versión del editorhttp://dx.doi.org/10.1016/j.ssc.2010.02.029
URIhttp://hdl.handle.net/10261/22407
DOI10.1016/j.ssc.2010.02.029
ISSN0038-1098
Aparece en las colecciones: (IMN-CNM) Artículos




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