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Título

Reflectivity of crystalline Ge and Si at the melting temperature measured in real time with subnanosecond temporal resolution

AutorChaoui, N.; Siegel, Jan ; Solís Céspedes, Javier ; Afonso, Carmen N.
Fecha de publicacióndic-2000
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 89(7): 3763 (2001)
ResumenReal time reflectivity measurements with subnanosecond time resolution have been used to determine the reflectivity at the melting temperature RS(Tm) of single crystalline Ge and Si at 514.5 nm. Due to the excellent time resolution and sensitivity achieved in a single exposure experiment, the reflectivity of the solid just before melting could be measured. Values of RS(Tm)=0.470±0.006 and RS(Tm)=0.440±0.008 for c-Ge and c-Si have, respectively, been determined. These values, together with those determined by heating in vacuum in the range 300–800 K, are compared to those reported earlier in the literature and the differences are discussed.
Descripción5 pages, 4 figures.
Versión del editorhttp://dx.doi.org/10.1063/1.1350413
URIhttp://hdl.handle.net/10261/22332
DOI10.1063/1.1350413
ISSN0021-8979
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