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Distinct nonequilibrium plasma chemistry of C2 affecting the synthesis of nanodiamond thin films from C2H2 (1%)/H2/Ar-rich plasmas

AutorGordillo Vázquez, Francisco J. ; Albella, J. M.
Fecha de publicaciónago-2003
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 94(9): 6085 (2003)
ResumenWe show that the concentrations of the species C2 (X 1Σg+), C2 (a 3Πu), and C2H exhibit a significant increase when the argon content grows up to 95% in medium pressure (0.75 Torr) radio frequency (rf) (13.56 MHz) produced C2H2 (1%)/H2/Ar plasmas of interest for the synthesis of nanodiamond thin films within plasma enhanced chemical vapor deposition devices. In contrast, the concentrations of CH3 and C2H2 remain practically constant. The latter results have been obtained with an improved quasianalytic space–time-averaged kinetic model that, in addition, has allowed us to identify and quantify the relative importance of the different underlying mechanisms driving the nonequilibrium plasma chemistry of C2. The results presented here are in agreement with recent experimental results from rf CH4/H2/Ar-rich plasmas and suggest that the growth of nanodiamond thin films from hydrocarbon/Ar-rich plasmas is very sensitive to the contribution of C2 and C2H species from the plasma.
Descripción6 pages, 5 figures, 6 tables.
Versión del editorhttp://dx.doi.org/10.1063/1.1617362
URIhttp://hdl.handle.net/10261/22318
DOI10.1063/1.1617362
ISSN0021-8979
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