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Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy

AuthorsPostigo, Pablo Aitor ; Dotor, María Luisa ; García-Pérez, Fernando ; Golmayo, Dolores ; Briones Fernández-Pola, Fernando
Issue DateNov-2000
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 89(4): 2447 (2000)
AbstractSnTe-doped InP layers were grown at low temperature by solid-source atomic layer molecular beam epitaxy. The samples were characterized by Hall measurements versus temperature, low temperature photoluminescence, x-ray diffraction, and secondary ion mass spectroscopy. The temperature of the SnTe effusion cell was varied from 320 to 440 °C, and the free electron concentration measured at room temperature ranged between 2.0×1016 cm−3 and 5.6×1018 cm−3 with the corresponding Hall mobility varying from 2320 to 1042 cm2/V s.
Description5 pages, 7 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.1337599
Appears in Collections:(IMN-CNM) Artículos
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