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On the properties of GaP supersaturated with Ti

AuthorsOlea, J.; Algaidy, S.; Prado, A. del; García-Hemme, E.; García-Hernansanz, R.; Montero, D.; Caudevilla, D.; González-Díaz, G.; Soria, Esther; Gonzalo, J.
KeywordsGallium compounds
Ion implantation
Laser applications
Photovoltaic cells
Issue Date10-Dec-2019
CitationJournal of Alloys and Compounds 820: 1533583 (2020)
AbstractWe have fabricated GaP supersaturated with Ti by means of ion implantation and pulsed-laser melting to obtain an intermediate band material with applications in photovoltaics. This material has a strong sheet photoconductance at energies below the bandgap of GaP and it seems to be passivated by a Ga defective GaPO oxide layer during the laser process. Passivation is consistently analyzed by sheet photoconductance and photoluminescence measurements. We report on the structural quality of the resulting layers and analyze the energy of the new optical transitions measured on GaP:Ti. A collapse found in the sheet photoconductance spectra of GaP:Ti samples fabricated on undoped substrates is explained by the negative photoconductivity phenomenon.
Description8 pags., 7 figs., 2 tabs.
Publisher version (URL)http://dx.doi.org/10.1016/j.jallcom.2019.153358
Identifiersdoi: 10.1016/j.jallcom.2019.153358
issn: 0925-8388
Appears in Collections:(CFMAC-IO) Artículos
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