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Efficient domain-wall pinning at chemical notches in FeNi nanowires

AuthorsRuiz-Gómez, S.; Foerster, M; Aballe, L.; Proenca, M; Mascaraque, A.; Quesada, Adrián CSIC ORCID ; de la Figuera, Juan CSIC ORCID ; Perez, L.
Issue Date24-Jan-2018
CitationX Reunión GEFES , 24- 26 de Enero (2018)
AbstractFuture magnetic storage technology might rely on the movement of magnetic domain walls using spin polarized currents. The magnetic domain walls which define the bits should be pinned in artificially created notches along magnetic wires [1,2], but the depinning of a domain wall from these notches has an intrinsic stochastic component [3]. New types of notches are needed to overcome those limits. In this work we have introduced local changes in composition along permalloy nanowires which act as local pinning sites. We study the behavior of magnetic domain walls and the structures of the magnetic domains using a LEEM-PEEM microscope in the CIRCE beamline at ALBA synchrotron. We have used XAS-PEEM to obtain images with chemical contrast (see Fig. 1a) and XMCD-PEEM to get magnetic contrast (Fig 1b). We correlate composition and magnetic properties of the nanowires, proven that chemical notches act as pinning sites for the domain walls. After applying a magnetic field, the domain walls move (see Fig 1c). These results open the possibility of using these chemically modulated nanowires as storage elements in race- track memories.
DescriptionX reunión GEFES, 24- 26 de Enero, Valencia (España) 2018 .- https://gefes-rsef.org/gefes2018/
Appears in Collections:(ICV) Comunicaciones congresos
(IQFR) Comunicaciones congresos
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