English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/22161
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
Citado 30 veces en Web of Knowledge®  |  Ver citas en Google académico
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Título

Sequential tunneling current through semiconductor superlattices under intense THz radiation

AutorPlatero, Gloria ; Aguado, Ramón
Fecha de publicaciónabr-1997
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 70(26): 3546 (1997)
ResumenRecent transport measurements in GaAs–GaAlAs superlattices under THz radiation show evidence of dynamical localization and electron pumping in the opposite direction to the dc bias in the linear response regime. The ac field induces absorption and emission processes in the multiwell structure which assist the tunnel and which are reflected as new features in the current density. A calculation within the framework of the Bardeen Hamiltonian has been performed to evaluate the tunneling current through the superlattice in the presence of an ac field. By means of this model these new features are reproduced in the current which can be explained in terms of the new induced tunneling channels and of the charge occupation in the wells.
Descripción3 pages, 3 figures.
Versión del editorhttp://dx.doi.org/10.1063/1.119228
URIhttp://hdl.handle.net/10261/22161
DOI10.1063/1.119228
ISSN0003-6951
Aparece en las colecciones: (ICMM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
httpGetPDFServlet10.1063_1.pdf200,83 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 



NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.