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Título

Fabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterning

AutorRius, Gemma; Llobet, J.; Borrisé, Xavier ; Mestres, Narcís ; Retolaza, A.; Merino, Santos; Perez Murano, Francesc X.
Palabras claveAluminium
CMOS integrated circuits
Elemental semiconductors
Focused ion beam technology
Fecha de publicación2-dic-2009
EditorAmerican Vacuum Society
CitaciónJournal of Vacuum Science and Technology - Section B 27(6): 2691-2697 (2009)
ResumenThe authors present a novel approach to fabricate nanomechanical devices integrated into complementary metal-oxide-semiconductor (CMOS) circuits. It is based on focused ion beam patterning using two different processes: (i) ion-beam-induced deposition of tethraethoxysilane and (ii) direct exposure of silicon or polysilicon surfaces. In both cases, the irradiated areas sustain a reactive-ion etching process, acting as robust masks for defining nanomechanical devices with submicron resolution. These processes are compared, in terms of throughput, with direct milling of silicon and with patterning of thin aluminum layers. Compatibility with prefabricated CMOS circuits is studied and they found that the process is entirely compatible if the proper exposure conditions are used.
Descripción7 pages.-- PACS: 81.16.Rf; 85.85.+j; 81.65.Cf; 85.35.-p; 81.15.Jj; 85.40.Sz
Versión del editorhttp://dx.doi.org/10.1116/1.3253550
URIhttp://hdl.handle.net/10261/21946
DOI10.1116/1.3253550
ISSN1071-1023
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