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p-type ultrawide-band-gap spinel ZnGa2O4: New perspectives for energy electronics

AuthorsChikoidze, Ekaterine; Sartel, Corinne; Madaci, Ismail; Mohamed, Hagar; Vilar, Christele; Ballesteros, Belén ; Belarre, Francisco J. ; Del Corro, Elena; Vales-Castro, Pablo; Sauthier, Guillaume ; Li, Lijie; Jennings, Michael R.; Sallet, Vincent; Dumont, Yves; Pérez-Tomás, Amador
Issue Date2020
PublisherAmerican Chemical Society
CitationCrystal Growth and Design 20(4): 2535–2546 (2020)
AbstractThe family of spinel compounds is a large and important class of multifunctional materials of general formulation AB2X4 with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. In this work, it is demonstrated that the ternary ultrawide-band-gap (∼5 eV) spinel zinc gallate (ZnGa2O4) arguably is the native p-type ternary oxide semiconductor with the largest Eg value (in comparison with the recently discovered binary p-type monoclinic β-Ga2O3 oxide). For nominally undoped ZnGa2O4 the high-temperature Hall effect hole concentration was determined to be as large as p = 2 × 1015 cm–3, while hole mobilities were found to be μh = 7–10 cm2/(V s) (in the 680–850 K temperature range). An acceptor-like small Fermi level was further corroborated by X-ray spectroscopy and by density functional theory calculations. Our findings, as an important step toward p-type doping, opens up further perspectives for ultrawide-band-gap bipolar spinel electronics and further promotes ultrawide-band-gap ternary oxides such as ZnGa2O4 to the forefront of the quest of the next generation of semiconductor materials for more efficient energy optoelectronics and power electronics.
Publisher version (URL)https://doi.org/10.1021/acs.cgd.9b01669
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