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Ion bombardment induced formation of self-organized wafer-scale GaInP nanopillar assemblies

AuthorsVisser, Dennis; Jaramillo-Fernandez, Juliana ; Haddad, Gabriel; Sotomayor Torres, C. M. ; Anand, Srinivasan
Issue Date2020
PublisherAmerican Institute of Physics
CitationJournal of Vacuum Science and Technology B 38(1): 012801 (2020)
AbstractIon sputtering assisted formation of nanopillars is demonstrated as a wafer-scale, lithography-free fabrication method to obtain high optical quality gallium indium phosphide (GaInP) nanopillars. Compared to binary materials, little has been reported on the formation of self-organized ternary nanostructures. Epitaxial (100) Ga0.51In0.49P layers lattice matched to GaAs were sputtered by nitrogen (N2) ions with relatively low ion beam energies (∼400 eV) to reduce ion bombardment induced damage. The influence of process parameters such as temperature, sputter duration, ion beam energy, and ion beam incidence angle on the pillar formation is investigated. The fabricated GaInP nanopillars have average diameters of ∼75–100 nm, height of ∼220 nm, and average density of ∼2–4 × 108 pillars/cm2. The authors show that the ion beam incidence angle plays an important role in pillar formation and can be used to tune the pillar shape, diameter, and spatial density. Specifically, tapered to near cylindrical pillar profiles together with a reduction in their average diameters are obtained by varying the ion beam incidence angle from 0° to 20°. A tentative model for the GaInP nanopillar formation is proposed based on transmission electron microscopy and chemical mapping analysis. μ-Photoluminescence and μ-Raman measurements indicate a high optical quality of the c-GaInP nanopillars.
Publisher version (URL)https://doi.org/10.1116/1.5127265
Appears in Collections:(CIN2) Artículos
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