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Cryogenic memory element based on an anomalous Josephson junction

AuthorsGuarcello, Claudio; Bergeret, F. S.
Issue Date2020
PublisherAmerican Physical Society
CitationPhysical Review Applied 13(3): 034012 (2020)
AbstractWe propose a nonvolatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads to a magnetoelectric effect that couples the charge current through the junction and its magnetization, such that by applying a current pulse the direction of the magnetic moment in F can be switched. The two memory states are encoded in the direction of the out-of-plane magnetization. With the aim to determine the optimal working temperature for the memory element, we explore the noise-induced effects on the averaged stationary magnetization by taking into account thermal fluctuations affecting both the Josephson phase and the magnetic moment dynamics. We investigate the switching process as a function of intrinsic parameters of the ferromagnet, such as the Gilbert damping and strength of the spin-orbit coupling, and propose a nondestructive readout scheme based on a dc superconducting quantum interference device. Additionally, we analyze a way to protect the memory state from external perturbations by voltage gating in systems with a both linear-in-momentum Rashba and Dresselhaus spin-orbit coupling.
Publisher version (URL)https://doi.org/10.1103/PhysRevApplied.13.034012
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