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dc.contributor.authorJoucken, F.-
dc.contributor.authorAvila, J.-
dc.contributor.authorGe, Z.-
dc.contributor.authorQuezada-Lopez, E.A.-
dc.contributor.authorYi, H.-
dc.contributor.authorLe Goff, R.-
dc.contributor.authorBaudin, E.-
dc.contributor.authorDavenport, J.L.-
dc.contributor.authorWatanabe, K.-
dc.contributor.authorTaniguchi, T.-
dc.contributor.authorAsensio, M.C.-
dc.contributor.authorVelasco, J.-
dc.date.accessioned2020-08-14T08:50:05Z-
dc.date.available2020-08-14T08:50:05Z-
dc.date.issued2019-
dc.identifierdoi: 10.1021/acs.nanolett.9b00649-
dc.identifiere-issn: 1530-6992-
dc.identifierissn: 1530-6984-
dc.identifier.citationNano Letters 19: 2682- 2687 (2019)-
dc.identifier.urihttp://hdl.handle.net/10261/217952-
dc.description.abstract[EN] Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to noninvasively probe the electronic band structure of a material. By means of a state-of-the-art ARPES setup with submicron spatial resolution, we have investigated a heterostructure composed of Bernal-stacked bilayer graphene (BLG) on hexagonal boron nitride and deposited on a graphite flake. By voltage biasing the latter, the electric field effect is directly visualized on the valence band as well as on the carbon 1s core level of BLG. The band gap opening of BLG submitted to a transverse electric field is discussed and the importance of intra layer screening is put forward. Our results pave the way for new studies that will use momentum-resolved electronic structure information to gain insight on the physics of materials submitted to the electric field effect.-
dc.description.sponsorshipANR-14-CE08-018-05 funding “GoBN". J.V.J acknowledges support from UCOP. Atomic Force Microscope images were taken with an instrument acquired from Contract W911NF-17-1-0473 from the Army Research Office. BLG/hBN/graphite stacks were assembled in a glove box that was acquired from Contract W911NF-17-1-0473 from the Army Research Office.-
dc.languageeng-
dc.publisherAmerican Chemical Society-
dc.relation.isversionofPostprint-
dc.rightsclosedAccess-
dc.subjectElectrostatic gating-
dc.subjectARPES-
dc.subjectNanoARPES-
dc.subjectBilayer graphene-
dc.subjectVan der Waals heterostructure-
dc.subjectElectronic structure-
dc.titleVisualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy-
dc.typeartículo-
dc.identifier.doihttp://dx.doi.org/10.1021/acs.nanolett.9b00649-
dc.relation.publisherversionhttp://dx.doi.org/10.1021/acs.nanolett.9b00649-
dc.date.updated2020-08-14T08:50:05Z-
dc.rights.licenseCopyright © 2019 American Chemical Society-
dc.contributor.funderUS Army Research Laboratory-
dc.relation.csic-
dc.identifier.funderhttp://dx.doi.org/10.13039/100006754es_ES
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