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dc.contributor.authorPrieto, J. A.-
dc.contributor.authorArmelles Reig, Gaspar-
dc.contributor.authorGarcía Martínez, Jorge Manuel-
dc.contributor.authorGonzález Sotos, Luisa-
dc.contributor.authorSan Paulo, Álvaro-
dc.contributor.authorGarcía García, Ricardo-
dc.date.accessioned2010-02-26T14:16:01Z-
dc.date.available2010-02-26T14:16:01Z-
dc.date.issued2000-05-15-
dc.identifier.citationApplied Physics Letters 76(20): 2919 (2000)en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10261/21728-
dc.description3 pages, 5 figures.-- PACS: 73.20.Dx; 81.05.Ea; 73.20.Fz; 68.65.+g; 85.30.Vw; 78.66.Fd; 61.72.Hh; 61.46.+w; 71.24.+q; 81.05.Ysen_US
dc.description.abstractThe localization of the L-like conduction states is found to change from the islands to the substrate in InAs quantum dots grown on GaAs as the island-size decreases. This is due to a size-induced modification of the strain state of the islands. The critical size should correspond to dislocation formation. As a result, small InAs islands coherently strained to GaAs exhibit optical properties markedly different from those of bulk InAs.en_US
dc.description.sponsorshipThis work has been supported by the Spanish CICYT under Grant Nos. MAT95-0966-C02-01 and TIC96-1020- C02-01.en_US
dc.format.extent184056 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsopenAccessen_US
dc.subjectIndium compoundsen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectOptical propertiesen_US
dc.titleCritical size for localization of the L-like conduction states in InAs quantum dots grown on GaAsen_US
dc.typeartículoen_US
dc.identifier.doi10.1063/1.126855-
dc.description.peerreviewedPeer revieweden_US
dc.relation.publisherversionhttp://dx.doi.org/10.1063/1.126855en_US
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