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Title

Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures

AuthorsGonzález Sotos, Luisa ; García Martínez, Jorge Manuel CSIC ORCID CVN ; García García, Ricardo CSIC ORCID; Briones Fernández-Pola, Fernando; Martínez Pastor, Juan Pascual; Ballesteros Pérez, Carmen Inés
KeywordsIndium compounds
III-V semiconductors
Surface structure
Molecular beam epitaxial growth
Semiconductor growth
Issue Date28-Feb-2000
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 76(9): 1104 (2000)
AbstractWe have studied the influence of InP buffer-layer morphology in the formation of InAs nanostructures grown on InP(001) substrates by solid-source molecular-beam epitaxy. Our results demonstrate that when InP buffer layers are grown by atomic-layer molecular-beam epitaxy, InAs quantum dot-like structures are formed, whereas InP buffer layers grown by MBE produce quantum-wire-like structures. The optical properties of these corrugated structures make them potential candidates for their use in light-emitting devices at 1.55 µm.
Description3 pages, 3 figures.-- PACS: 81.05.Ea; 68.65.+g; 78.55.Cr; 78.66.Fd; 68.35.Bs; 68.55.Jk; 81.15.Hi; 81.15.Ef
Publisher version (URL)http://dx.doi.org/10.1063/1.125952
URIhttp://hdl.handle.net/10261/21725
DOI10.1063/1.125952
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos

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