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Título

Strain relaxation and segregation effects during self-assembled InAs quantum dots formation on GaAs(001)

AutorGarcía Martínez, Jorge Manuel ; Silveira, Juan Pedro ; Briones Fernández-Pola, Fernando
Palabras claveIndium compounds
III-V semiconductors
Segregation
Semiconductor quantum dots
Fecha de publicación17-jul-2000
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 77(3): 409 (2000)
ResumenIn segregation effects during InAs growth on GaAs(001) and critical thickness for InAs self-assembled quantum dots are studied using a real time, in situ technique capable of measuring accumulated stress during growth. Due to a large (~50%) surface In segregation of floating In, self-assembled dot formation takes place when less than one monolayer of InAs is pseudomorphically grown on GaAs. A picture of the growth process is discussed on the basis of the equilibrium between InAs and floating In dominated by the stress energy.
Descripción3 pages, 2 figures.-- PACS: 81.05.Ea; 68.35.Dv; 68.55.Jk; 68.60.Bs
Versión del editorhttp://dx.doi.org/10.1063/1.126992
URIhttp://hdl.handle.net/10261/21722
DOI10.1063/1.126992
ISSN0003-6951
Aparece en las colecciones: (IMN-CNM) Artículos
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