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Título: | Comparison of Raman-scattering and Shubnikov–de Haas measurements to determine charge density in doped semiconductors |
Autor: | Cuscó, Ramón CSIC ORCID ; Artús, Lluís CSIC ORCID ; Ibáñez Insa, Jordi CSIC ORCID ; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R. | Palabras clave: | Indium compounds III-V semiconductors Raman spectra Shubnikov-de Haas effect Phonon-plasmon interactions |
Fecha de publicación: | 1-dic-2000 | Editor: | American Institute of Physics | Citación: | Journal of Applied Physics 88(11): 6567 (2000) | Resumen: | We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon–plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov–de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard–Mermin model used to fit the Raman spectra and in the Shubnikov–de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard–Mermin model. | Descripción: | 4 pages, 3 figures.-- PACS: 78.30.Fs; 72.20.My; 73.61.Ey; 71.20.Nr; 78.66.Fd; 63.20.Ls; 72.80.Ey | Versión del editor: | http://dx.doi.org/10.1063/1.1322593 | URI: | http://hdl.handle.net/10261/21706 | DOI: | 10.1063/1.1322593 | ISSN: | 0021-8979 |
Aparece en las colecciones: | (Geo3Bcn) Artículos |
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