English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21706
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Comparison of Raman-scattering and Shubnikov–de Haas measurements to determine charge density in doped semiconductors

AuthorsCuscó, Ramón ; Artús, Lluís ; Ibáñez Insa, Jordi ; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R.
KeywordsIndium compounds
III-V semiconductors
Raman spectra
Shubnikov-de Haas effect
Phonon-plasmon interactions
Issue Date1-Dec-2000
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 88(11): 6567 (2000)
AbstractWe have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon–plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov–de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard–Mermin model used to fit the Raman spectra and in the Shubnikov–de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard–Mermin model.
Description4 pages, 3 figures.-- PACS: 78.30.Fs; 72.20.My; 73.61.Ey; 71.20.Nr; 78.66.Fd; 63.20.Ls; 72.80.Ey
Publisher version (URL)http://dx.doi.org/10.1063/1.1322593
Appears in Collections:(ICTJA) Artículos
Files in This Item:
File Description SizeFormat 
GetPDFServlet.pdf51,73 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.