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Comparison of Raman-scattering and Shubnikov–de Haas measurements to determine charge density in doped semiconductors

AutorCuscó, Ramón ; Artús, Lluís ; Ibáñez Insa, Jordi ; Blanco, N.; González-Díaz, G.; Rahman, M.; Long, A. R.
Palabras claveIndium compounds
III-V semiconductors
Raman spectra
Shubnikov-de Haas effect
Phonon-plasmon interactions
Fecha de publicación1-dic-2000
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 88(11): 6567 (2000)
ResumenWe have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon–plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov–de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard–Mermin model used to fit the Raman spectra and in the Shubnikov–de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard–Mermin model.
Descripción4 pages, 3 figures.-- PACS: 78.30.Fs; 72.20.My; 73.61.Ey; 71.20.Nr; 78.66.Fd; 63.20.Ls; 72.80.Ey
Versión del editorhttp://dx.doi.org/10.1063/1.1322593
URIhttp://hdl.handle.net/10261/21706
DOI10.1063/1.1322593
ISSN0021-8979
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