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Título

In situ growth of optically active erbium doped Al2O3 thin films by pulsed laser deposition

AutorSerna, Rosalía ; Afonso, Carmen N.
Palabras claveAluminium oxides
Ablation
Film growth
Laser radiation
Fecha de publicación9-sep-1996
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 69(11): 1541 (1996)
ResumenThin Al2O3 films are grown and in situ doped with erbium by pulsed laser deposition in a single step process, by alternate ablation from Al2O3 and Er targets. The as-deposited films have an Er step dopant profile throughout the film thickness, whose concentration depends on the number of pulses at the Er target. The as-grown films are optically active, as evidenced by the photoluminescence spectrum centered at 1.533 µm, corresponding to intra-4f transitions in Er3 + . The photoluminescence intensity increases upon annealing due to an increase of the luminescence lifetime. This is most likely a result of a decrease in the nonradiative decay channels, related to annealing of defects in the Al2O3 film.
Descripción3 pages, 3 figures.-- PACS: 81.15.Fg; 78.66.Nk; 78.55.Hx
Versión del editorhttp://dx.doi.org/10.1063/1.117998
URIhttp://hdl.handle.net/10261/21569
DOI10.1063/1.117998
ISSN0003-6951
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