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Production of ordered silicon nanocrystals by low-energy ion sputtering

AuthorsGago, Raúl ; Vázquez, Luis ; Cuerno, Rodolfo; Varela, María; Ballesteros Pérez, Carmen Inés
Issue Date21-May-2001
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 78(21): 3316 (2001)
AbstractWe report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si (100) substrate with 1.2 keV Ar + ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiation (up to 16 h) all dot characteristics remain largely unchanged and a small corrugation develops at long wavelengths. We interpret the formation of the dots as a result of an instability due to the sputtering yield dependence on the local surface curvature.
Description3 pages, 3 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.1372358
Appears in Collections:(ICMM) Artículos
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