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Title: | Production of ordered silicon nanocrystals by low-energy ion sputtering |
Authors: | Gago, Raúl CSIC ORCID; Vázquez, Luis CSIC ORCID ; Cuerno, Rodolfo; Varela, María; Ballesteros Pérez, Carmen Inés | Issue Date: | 21-May-2001 | Publisher: | American Institute of Physics | Citation: | Applied Physics Letters 78(21): 3316 (2001) | Abstract: | We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si (100) substrate with 1.2 keV Ar + ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiation (up to 16 h) all dot characteristics remain largely unchanged and a small corrugation develops at long wavelengths. We interpret the formation of the dots as a result of an instability due to the sputtering yield dependence on the local surface curvature. | Description: | 3 pages, 3 figures. | Publisher version (URL): | http://dx.doi.org/10.1063/1.1372358 | URI: | http://hdl.handle.net/10261/21540 | DOI: | 10.1063/1.1372358 | ISSN: | 0003-6951 |
Appears in Collections: | (ICMM) Artículos |
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