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Título

Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations

AutorSerna, Rosalía ; Jiménez de Castro, Miguel ; Chaos, J. A.; Suárez García, A.; Afonso, Carmen N. ; Fernández, M. ; Vickridge, I.
Fecha de publicación15-nov-2001
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 90(10): 5120 (2001)
ResumenErbium doped Al2O3 films with concentrations up to 6×1020 Er cm–3 have been prepared in a single step process by pulsed-laser deposition. Alternate ablation of Al2O3 and Er targets has been used to control the in-depth distribution and in-plane concentration of Er3 + ions independently. The characteristic Er3 + photoluminescence response at 1.53 µm has been studied as a function of the Er3 + distribution. It is found that lifetime values can be greatly increased by increasing the Er3 + –Er3 + in-depth separation above 3 nm. This result can be related to a reduced Er3 + –Er3 + energy migration process. The in-plane Er3 + concentration was increased by either increasing the number of pulses on the Er target or the laser energy density for ablation. By the latter method in-plane concentrations as high as 1.1×1014 Er cm–2 per layer (corresponding to 2×1020 Er cm–3) were achieved, while keeping lifetime values as high as 6 ms. This result is explained in terms of shallow Er3 + implantation during deposition.
Descripción6 pages, 5 figures.
Versión del editorhttp://dx.doi.org/10.1063/1.1409575
URIhttp://hdl.handle.net/10261/21461
DOI10.1063/1.1409575
ISSN0021-8979
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