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Título

Whiskers in indium tin oxide films obtained by electron beam evaporation

AutorCastañeda, S. I.; Rueda, Fernando; Díaz, R.; Ripalda, José María ; Montero, Isabel
Fecha de publicación15-feb-1998
EditorAmerican Institute of Physics
CitaciónJournal of Applied Physics 83(4): 1995 (1998)
ResumenIndium tin oxide thin films consisting mainly of whiskers have been deposited on glass by electron beam evaporation. Low deposition rates (35 Å/min) and substrate temperatures in the 120–400 °C range were used. Morphology by scanning electron microscopy, crystal structure, energy dispersive analysis of x-rays, and x-ray photoelectron spectroscopy compositions, optical and conducting properties of films have been studied as a function of temperature of growth and further annealing in air. Whiskers associate and produce flatter surfaces, the grain size increases from 390 Å to 790 Å, keeping however its fibrous structure after 400 °C-30 min annealing. In films deposited at temperatures below 200 °C, next to cubic In2O3, tetragonal Sn and cubic In2Sn2O(7 – x) appear. During growth and after air annealing Sn4 + segregates to the surface, attaining Sn/In concentration ratios of 4.6. On air annealing the optical transmittance and electrical resistance increase, in some cases from 2% to 90% and by a factor of about 4, respectively.
Descripción8 pages, 11 figures, 7 tables.
Versión del editorhttp://dx.doi.org/10.1063/1.366928
URIhttp://hdl.handle.net/10261/21443
DOI10.1063/1.366928
ISSN0021-8979
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