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Título

Plasma assisted chemical vapor deposition silicon oxynitride films grown from SiH4 + NH3 + O2 gas mixtures

AutorOlivares Roza, J.; Sánchez, Olga ; Albella, J. M.
Palabras claveSilicon compounds
Insulating thin films
Plasma CVD coatings
Infrared spectra
Stoichiometry
Refractive index
Fecha de publicaciónsep-1998
EditorAmerican Vacuum Society
CitaciónJournal of Vacuum Science and Technology - Section A 16(5):2757-2761 (1998)
ResumenSilicon oxynitride films exhibiting refractive indexes in the 2.01–1.49 range have been deposited in a plasma assisted chemical vapor deposition system using SiH4 + NH3 + O2 gas mixtures. The O2/NH3 gas ratio was varied in order to obtain different oxynitride compositions, ranging from silicon nitride to nearly stoichiometric silicon oxide. A single peak, in contrast to two separate peaks normally associated with silicon oxide and silicon nitride, was observed in the IR spectra, indicating the formation of a unique oxynitride compound. The IR absorption spectra as well as the refractive indexes measured by ellipsometry were used to estimate the stoichiometry of the films, the results being well correlated to Auger analysis
Descripción5 pages.-- Pacs numbers: 73.61.Ng; 81.15.Gh; 78.66.Nk; 78.30.Am; 52.75.Rx; 78.20.Ci
Versión del editorhttp://dx.doi.org/10.1116/1.581513
URIhttp://hdl.handle.net/10261/21385
DOI10.1116/1.581513
ISSN0734-2101
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