English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/212256
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Title

Growth and characterization of Zr doped ZnO structures on femtosecond laser induced periodic structures on different substrates

AuthorsAriza, Rocío; Sotillo, B.; Urbieta, A.; Siegel, Jan ; Solís Céspedes, Javier ; Fernandez, P.
Issue Date30-Aug-2019
Citation7th Dresden Nanoanalysis Symposium (2019)
AbstractDoped ZnO nanostructures have been widely investigated for their electrical and optical properties. It is one of the most used transparent conducting oxide (TCO) with low resistivity (¿10¿3¿¿¿¿¿), high transparency (>80%) and high carrier concentration (¿1020¿¿¿¿¿3). Doping with Zr is proposed because of the similar ionic size of Zr4+ and Zn2+. That means the lattice distortions are minimized while the thermal and the chemical stability are improved being a promising alternative for high temperature working devices [1]. Furthermore, ZnO:Zr has shown enhanced photocatalytic properties [2]. In this work, Zr doped ZnO structures have been grown on different oriented Silicon substrates by a vapour-solid method under an Argon flux as is shown in Figure 1a. Mixtures of ZnS and ZrO2 in different percentages were used as precursors. Silicon <100> and <111> substrates have been also irradiated under certain conditions by a femtosecond laser operating at 1030nm with a pulse duration of 340 fs (Figure 1b). The irradiation of the substrates generates laser periodic surface structures (LIPSS) which depending on the irradiation condition could be amorphous or ablative structures [3]. The influence of the processed surface in the growth has been studied according to different parameters as the thermal treatment duration, percentage of doping, type of induced LIPSS and substrate orientation among others. Scanning Electron Microscopy has been used to analyze the morphology of the structures and Photoluminescence measurements provide information about the luminescence properties and the amount of defects in the structure giving a hint about the influence of the different parameters used in the growing process. References [1] S. Herodotou, R. Treharne, K. Durose, G. Tatlock, R. Potter, Materials 2015, 8, 10. [2] N. Clament Segaya Selvam, J. Judith Vijaya, L. John Kennedy, Industrial & Engineering Chemistry Research 2012, 51, 50. [3] D. Puerto, M. Garcia-Lechuga, A. Garcia-Leis, S. Sanchez-Cortes, J. Solis, J. Siegel, Nanotechnology 2016, 27, 26.
Description“Nano-scale characterization for cutting-edge materials research and sustainable materials development”, Dresden, Germany, August 30 th, 2019
URIhttp://hdl.handle.net/10261/212256
Appears in Collections:(CFMAC-IO) Comunicaciones congresos
Files in This Item:
File Description SizeFormat 
Growth and characterization.pdf4,27 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.