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dc.contributor.authorAriza, Rocío-
dc.contributor.authorSotillo, Belén-
dc.contributor.authorUrbieta, Ana-
dc.contributor.authorSiegel, Jan-
dc.contributor.authorSolís Céspedes, Javier-
dc.contributor.authorFernandez, Paloma-
dc.identifier.citationUltrafast Science and Technology Spain (2019)-
dc.descriptionUSTS 2019, Madrid, Spain, 06 - 08 November, 2019-
dc.description.abstractZnO has a huge variety of applications in the optoelectronic field due to its excellent properties. Additionally, doped ZnO nanostructures have been extensively investigated in order to modify the optical and electrical properties. Zr was chosen as dopant due to Zr4+ ionic radius being comparable with Zn2+, meaning the lattice distortion is minimized1, as well as when Zn is substituted for Zr two extra free electrons are donated and the carrier density should increase2. Furthermore, this material presents a high thermal and chemical stability and it has been seen that Zr does not bind with Zn, avoiding intermetallic phase formation. For all these reasons, structures based on Zr-doped ZnO offer potential applications as an alternative to the most used transparent conducting oxides (TCO) working at high temperature1 among other applications in photocatalysis3. In this work, various substrates were irradiated by a femtosecond laser operating at 1030 nm with a pulse duration of 350 fs. Under certain conditions it is possible to generate laser induced periodic surface structures (LIPSS) in different materials4,5 as is shown in Figure 1a, which allows to explore the influence of different types of LIPSS on the growth process of nanostructures. To this end, Zr-doped ZnO structures were grown by a vapour-solid method under a constant Argon flux (Figure 1b). In order to determine the critical parameter in the process, mixtures of ZnS and ZrO2 in different percentages were used as precursor, in conjunction with changes made in parameters such as the thermal treatment duration, orientation and type of LIPSS, crystalline orientation and substrate material. Characterization of the structures was carried out by means of Scanning Electron Microscopy (SEM) and Photoluminescence (PL), providing information about the morphology and variations in luminescent defects as a result of growing on patterned substrates. Figure 1. a) Optical image of amorphous-crystalline LIPSS in silicon <100> and b) secondary electron image of Zr-doped structures grown on laser patterned silicon substrate. Notes and References 1 Herodotou, S., Treharne, R., Durose, K., Tatlock, G., & Potter, R., Materials, 2015, vol. 8, no 10, p. 7230-7240 2 Lin, M. C., Chang, Y. J., Chen, M. J., & Chu, C. J. Journal of The Electrochemical Society, 2011, vol. 158, no 6, p. D395-D398. 3 Clament Sagaya Selvam, N., Vijaya, J. J., & Kennedy, L. J. Industrial & Engineering Chemistry Research, 2012, vol. 51, no 50, p. 16333-16345. 4 Puerto, D., Garcia-Lechuga, M., Hernandez-Rueda, J., Garcia-Leis, A., Sanchez-Cortes, S., Solis, J., & Siegel, J. Nanotechnology, 2016, vol. 27, no 26, p. 265602. 5 Escalante, G., Ryu, Y. K., de la Cruz, A. R., Puerto, D., Solís, J., & Fernández, P. Applied Physics A, 2015, vol. 121, no 2, p. 607-617.-
dc.titleFemtosecond laser induced periodic surface structures as substrate patterns for the growth of Zr-doped ZnO structures-
dc.typepóster de congreso-
Appears in Collections:(CFMAC-IO) Comunicaciones congresos
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