Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/21170
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Segregation and trapping of erbium during silicon molecular beam epitaxy |
Autor: | Serna, Rosalía CSIC ORCID ; Lohmeier, M.; Zagwijn, P. M.; Vlieg, E.; Polman, A. | Fecha de publicación: | 13-mar-1995 | Editor: | American Institute of Physics | Citación: | Applied Physics Letters 66(11): 1385 (1995) | Resumen: | Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si(100) at 600 °C. Once a critical Er surface areal density of 2 × 1014 Er/cm2 is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si(100) is fully avoided when growth is performed in an oxygen background pressure of ~ 10 – 10 mbar, due to the formation of Er-O complexes. No Er segregation is observed on Si(111), which is attributed to the formation of epitaxial Er3Si5 precipitates. | Descripción: | 3 pages, 4 figures. | Versión del editor: | http://dx.doi.org/10.1063/1.113209 | URI: | http://hdl.handle.net/10261/21170 | DOI: | 10.1063/1.113209 | ISSN: | 0003-6951 |
Aparece en las colecciones: | (CFMAC-IO) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
GetPDFServlet.pdf | 67,56 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
SCOPUSTM
Citations
40
checked on 21-abr-2024
WEB OF SCIENCETM
Citations
47
checked on 24-feb-2024
Page view(s)
341
checked on 23-abr-2024
Download(s)
279
checked on 23-abr-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.