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Title

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

AuthorsAbed, Chayma; Fernández, Susana; Aouida, Selma; Elhouichet, Habib; Priego, Fernando; Castro Martín, Yolanda ; Gómez-Mancebo, M. B.; Munuera, C.
KeywordsAl doped ZnO-MgO powder
Solid-state method
Thin films
RF magnetron sputtering
Working pressure
Optoelectronic properties
Photovoltaic applications
Issue Date2020
PublisherMultidisciplinary Digital Publishing Institute
CitationMaterials 13(9): 2146 (2020)
AbstractIn this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.
Description© 2020 by the authors.
Publisher version (URL)https://doi.org/10.3390/ma13092146
URIhttp://hdl.handle.net/10261/211413
DOIhttp://dx.doi.org/10.3390/ma13092146
E-ISSN1996-1944
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