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Title: | Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structure |
Authors: | Zribi, Jihene; Khalil, Lama; Zheng, Biyuan; Avila, José; Pierucci, Debora; Brulé, Thibault; Chaste, Julien ![]() |
Keywords: | Two-dimensional (2D) materials SnS2/WSe2 |
Issue Date: | 2019 |
Publisher: | Nature Publishing Group |
Citation: | npj 2D Materials and Applications 3 (2019) |
Abstract: | [EN] The combination of monolayers of different two-dimensional (2D) materials into van der Waals hetero-bilayer structures creates unprecedented physical phenomena, acting as a powerful tool for future devices. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the hybridization of hetero-bilayer structures. Here, we show strong hybridization effects arising between the constitutive single layers of a SnS/WSe hetero-bilayer structure grown by chemical vapor deposition. Surprisingly, the valence band maximum position of WSe is moved from the K point for the single layer WSe to the Γ point for the aligned SnS/WSe hetero-bilayer. Additionally, a significant photoluminescence quenching is observed for the SnS/WSe hetero-bilayer structure with respect to the WSe monolayer. Using photoluminescence spectroscopy and nano-angle-resolved photoemission spectroscopy techniques, we demonstrate that the SnS/WSe heterostructure present a type-II band alignment. These findings directly answer many outstanding questions about the electronic band structure and the band offset of SnS/WSe hetero-bilayers for envisaging their applications in nanoelectronics. |
Publisher version (URL): | http://dx.doi.org/10.1038/s41699-019-0109-3 |
URI: | http://hdl.handle.net/10261/211309 |
DOI: | 10.1038/s41699-019-0109-3 |
Identifiers: | doi: 10.1038/s41699-019-0109-3 e-issn: 2397-7132 |
Appears in Collections: | (ICMM) Artículos |
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