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Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structure

AuthorsZribi, Jihene; Khalil, Lama; Zheng, Biyuan; Avila, José; Pierucci, Debora; Brulé, Thibault; Chaste, Julien ; Lhuillier, Emmanuel; Asensio, Maria C.; Pan, Anlian; Ouerghi, Abdelkarim
KeywordsTwo-dimensional (2D) materials
Issue Date2019
PublisherNature Publishing Group
Citationnpj 2D Materials and Applications 3 (2019)
Abstract[EN] The combination of monolayers of different two-dimensional (2D) materials into van der Waals hetero-bilayer structures creates unprecedented physical phenomena, acting as a powerful tool for future devices. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the hybridization of hetero-bilayer structures. Here, we show strong hybridization effects arising between the constitutive single layers of a SnS/WSe hetero-bilayer structure grown by chemical vapor deposition. Surprisingly, the valence band maximum position of WSe is moved from the K point for the single layer WSe to the Γ point for the aligned SnS/WSe hetero-bilayer. Additionally, a significant photoluminescence quenching is observed for the SnS/WSe hetero-bilayer structure with respect to the WSe monolayer. Using photoluminescence spectroscopy and nano-angle-resolved photoemission spectroscopy techniques, we demonstrate that the SnS/WSe heterostructure present a type-II band alignment. These findings directly answer many outstanding questions about the electronic band structure and the band offset of SnS/WSe hetero-bilayers for envisaging their applications in nanoelectronics.
Publisher version (URL)http://dx.doi.org/10.1038/s41699-019-0109-3
Identifiersdoi: 10.1038/s41699-019-0109-3
e-issn: 2397-7132
Appears in Collections:(ICMM) Artículos
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