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Title

Enhancing Magneto-Ionic Effects in Magnetic Nanostructured Films via Conformal Deposition of Nanolayers with Oxygen Acceptor/Donor Capabilities

AuthorsNavarro Senent, Cristina; Quintana, Alberto; Isarain Chávez, Eloy; Weschke, Eugen; Yu, Penmgei; Coll, Mariona ; Pellicer, Eva; Menéndez, Enric ; Sort, Jordi
KeywordsMagneto-ionic effects
Ion migration
Voltage control of magnetism
Co−Pt
Nanostructured material
Issue Date25-Mar-2020
PublisherAmerican Chemical Society
CitationACS Applied Materials and Interfaces 12(12): 14484-14494 (2020)
AbstractEffective manipulation of the magnetic properties of nanostructured metallic alloys, exhibiting intergrain porosity (i.e., channels) and conformally coated with insulating oxide nanolayers, with an electric field is demonstrated. Nanostructured Co–Pt films are grown by electrodeposition (ED) and subsequently coated with either AlOx or HfOx by atomic layer deposition (ALD) to promote magneto-ionic effects (i.e., voltage-driven ion migration) during electrolyte gating. Pronounced variations in coercivity (HC) and magnetic moment at saturation (mS) are found at room temperature after biasing the heterostructures. The application of a negative voltage results in a decrease of HC and an increase of mS, whereas the opposite trend is achieved for positive voltages. Although magneto-ionic phenomena are already observed in uncoated Co–Pt films (because of the inherent presence of oxygen), the ALD oxide nanocoatings serve to drastically enhance the magneto-ionic effects because of partially reversible oxygen migration, driven by voltage, across the interface between AlOx or HfOx and the nanostructured Co–Pt film. Co–Pt/HfOx heterostructures exhibit the most significant magneto-electric response at negative voltages, with an increase of mS up to 76% and a decrease of HC by 58%. The combination of a nanostructured magnetic alloy and a skinlike insulating oxide nanocoating is shown to be appealing to enhance magneto-ionic effects, potentially enabling electrolyte-gated magneto-ionic technology.
Publisher version (URL)http://dx.doi.org/10.1021/acsami.9b19363
URIhttp://hdl.handle.net/10261/211193
ISSN1944-8244
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