English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21067
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronics

AuthorsGarcía García, Nicolás; Muñoz, Manuel; Qian, G. G.; Rohrer, Heinrich; Saveliev, I. G.; Zhao, Y. W.
Issue Date31-Dec-2001
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 79(27): 4550 (2001)
AbstractWe present experimental results of unprecedented large magnetoresistance obtained in stable electrodeposited Ni–Ni nanocontacts 10–30 nm in diameter. The contacts exhibit magnetoresistance of up to 700% at room temperature and low applied fields and, therefore, act as very effective spin filters. These large values of the magnetoresistance are attributed to spin ballistic transport through a magnetic "dead layer" at the contact of width of about 1 nm or smaller. Nanometer sized, high sensitive magnetoresistive sensors could become key elements for magnetic storage in the terabit/in.2 range and in high density magnetic random access memories.
Description3 pages, 2 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.1427152
Appears in Collections:(LFSPyN) Artículos
Files in This Item:
File Description SizeFormat 
GetPDFServlet.pdf217,96 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.