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Título

Ballistic magnetoresistance in a magnetic nanometer sized contact: An effective gate for spintronics

AutorGarcía García, Nicolás; Muñoz, Manuel; Qian, G. G.; Rohrer, Heinrich; Saveliev, I. G.; Zhao, Y. W.
Fecha de publicación31-dic-2001
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 79(27): 4550 (2001)
ResumenWe present experimental results of unprecedented large magnetoresistance obtained in stable electrodeposited Ni–Ni nanocontacts 10–30 nm in diameter. The contacts exhibit magnetoresistance of up to 700% at room temperature and low applied fields and, therefore, act as very effective spin filters. These large values of the magnetoresistance are attributed to spin ballistic transport through a magnetic "dead layer" at the contact of width of about 1 nm or smaller. Nanometer sized, high sensitive magnetoresistive sensors could become key elements for magnetic storage in the terabit/in.2 range and in high density magnetic random access memories.
Descripción3 pages, 2 figures.
Versión del editorhttp://dx.doi.org/10.1063/1.1427152
URIhttp://hdl.handle.net/10261/21067
DOI10.1063/1.1427152
ISSN0003-6951
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