English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21058
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Displacement of domain walls under a nanocontact current: Mechanism for magnetoresistance asymmetric switching

AuthorsOsipov, V. V.; Ponizovskaya, E. V.; García García, Nicolás
Issue Date1-Oct-2001
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 79(14): 2222 (2001)
AbstractWe study the action of a magnetic field induced by nanocontact current pulses on the domain walls in thin magnetic films. We show that the pulses of a certain current direction shift the wall to the contact. Such an effect of attraction of the wall to the nanocontact does not depend on the initial position of the wall relative to the contact and results in an increase of nanocontact magnetoresistance. The opposite pulses repel this wall from the contact, i.e., the field action depends on the current direction. Our calculations explain experimental data relating to magnetoresistance devices.
Description3 pages, 3 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.1403315
Appears in Collections:(LFSPyN) Artículos
Files in This Item:
File Description SizeFormat 
GetPDFServlet.pdf199,14 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.