Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/21052
Share/Export:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Title

Local oxidation of silicon surfaces by dynamic force microscopy: Nanofabrication and water bridge formation

AuthorsGarcía García, Ricardo CSIC ORCID; Calleja, Montserrat CSIC ORCID ; Pérez Murano, Francesc
Issue Date4-May-1998
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 72(18): 2295 (1998)
AbstractLocal oxidation of silicon surfaces by atomic force microscopy is a very promising lithographic approach at nanometer scale. Here, we study the reproducibility, voltage dependence, and kinetics when the oxidation is performed by dynamic force microscopy modes. It is demonstrated that during the oxidation, tip and sample are separated by a gap of a few nanometers. The existence of a gap increases considerably the effective tip lifetime for performing lithography. A threshold voltage between the tip and the sample must be applied in order to begin the oxidation. The existence of a threshold voltage is attributed to the formation of a water bridge between tip and sample. It is also found that the oxidation kinetics is independent of the force microscopy mode used (contact or noncontact).
Description3 pages, 4 figures.
Publisher version (URL)http://dx.doi.org/10.1063/1.121340
URIhttp://hdl.handle.net/10261/21052
DOI10.1063/1.121340
ISSN0003-6951
Appears in Collections:(IMN-CNM) Artículos

Files in This Item:
File Description SizeFormat
GetPDFServlet.pdf169,8 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work

SCOPUSTM   
Citations

189
checked on May 18, 2022

Page view(s)

316
checked on May 18, 2022

Download(s)

202
checked on May 18, 2022

Google ScholarTM

Check

Altmetric

Dimensions


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.