English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/210510
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:


Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances

AuthorsFenollosa, Roberto; Ramiro-Manzano, F. ; Garín, Moisés; Alcubilla, Ramón
Issue Date3-Dec-2019
PublisherACS Publications
CitationACS Photonics 6(12): 3174-3179 (2019)
AbstractPlanck's law constitutes one of the cornerstones in physics. It explains the well-known spectrum of an ideal blackbody consisting of a smooth curve, whose peak wavelength and intensity depend on the temperature of the body. This scenario changes drastically, however, when the size of the emitting object is comparable to the wavelength of the emitted radiation. Here we show that a silicon microsphere (2-3 μm in diameter) heated to around 800 °C yields a thermal emission spectrum consisting of pronounced peaks that are associated with Mie resonances. We experimentally demonstrate in the near-infrared the existence of modes with an ultrahigh quality factor, Q, of 400, which is substantially higher than values reported so far, and set a new benchmark in the field of thermal emission. Simulations predict that the thermal response of the microspheres is very fast, about 15 μs. Additionally, the possibility of achieving light emission above the Planck limit at some frequency ranges is envisaged.
Publisher version (URL)http://dx.doi.org/10.1021/acsphotonics.9b01513
Identifiersdoi: 10.1021/acsphotonics.9b01513
issn: 2330-4022
Appears in Collections:(ITQ) Artículos
Files in This Item:
File Description SizeFormat 
Thermal_Emission.pdf4,63 MBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.