English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/210465
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

AuthorsEstandía, Saúl; Dix, Nico ; Chisholm, Matthew F.; Fina, Ignasi ; Sánchez Barrera, Florencio
Issue Date1-May-2020
PublisherAmerican Chemical Society
CitationCrystal Growth and Design: 10.1021/acs.cgd.0c00095 (2020)
AbstractEpitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films were epitaxially stabilized on La2/3Sr1/3MnO3(001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. These observed periodicities agree with those expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf0.5Zr0.5O2(111)/La2/3Sr1/3MnO3(001) heterostructure.
Publisher version (URL)http://dx.doi.org/10.1021/acs.cgd.0c00095
Appears in Collections:(ICMAB) Artículos
Files in This Item:
File Description SizeFormat 
Estandia_CrystGrowDes_2020_postprint.pdf Embargoed until May 1, 20211,98 MBAdobe PDFThumbnail
View/Open    Request a copy
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.