English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/209978
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:

DC FieldValueLanguage
dc.contributor.authorMavredakis, Nikolaos-
dc.contributor.authorWei, Wei-
dc.contributor.authorPallecchi, Emiliano-
dc.contributor.authorVignaud, Dominique-
dc.contributor.authorHappy, Henry-
dc.contributor.authorGarcia Cortadella, Ramon-
dc.contributor.authorBonaccini Calia, Andrea-
dc.contributor.authorGarrido, Jose A.-
dc.contributor.authorJiménez, David-
dc.identifierdoi: 10.1021/acsaelm.9b00604-
dc.identifierissn: 2637-6113-
dc.identifier.citationACS Applied Electronic Materials 1(12): 2626-2636 (2019)-
dc.description.abstractGraphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential, so it gets maximized as the drain voltage increases and the transistor's length shrinks. Under these conditions though, short channel effects like velocity saturation (VS) should be considered. The reduction of LFN data due to the VS effect at short channel GFETs operating at high drain potential is for the first time shown in the present work. Carrier number and mobility fluctuations have been proven to be the main sources that generate LFN in GFETs. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. In this paper we have proposed a physics-based analytical LFN model that works under both low and high electric field conditions. The implemented model is validated with experimental data from CVD grown back-gated single layer GFETs operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near the charge neutrality point because of the effect of the VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at high gate voltages and is accurately described by the proposed model. The noise parameter related to LFN at contacts is found to have an exponential dependence with contact resistance, and to our knowledge, this is shown for the first time.-
dc.description.sponsorshipThis work was funded by the Ministerio de Economía y Competitividad under the project TEC2015-67462-C2-1-R and the European Union’s Horizon 2020 research and innovation program under Grant Agreement No. GrapheneCore2 785219 (Graphene Flagship), Marie Skłodowska-Curie Grant Agreement No 665919 and Grant Agreement No. 732032 (BrainCom). This work was also partly supported by the French RENATECH network. The ICN2 is supported by the Severo Ochoa Centres of Excellence programme, funded by the Spanish Research Agency (AEI, grant no. SEV-2017-0706).-
dc.publisherAmerican Chemical Society-
dc.titleVelocity saturation effect on low frequency noise in short channel single layer graphene field effect transistors-
dc.contributor.funderEuropean Commission-
dc.contributor.funderMinisterio de Economía y Competitividad (España)-
dc.contributor.funderMinisterio de Ciencia, Innovación y Universidades (España)-
dc.contributor.funderAgencia Estatal de Investigación (España)-
Appears in Collections:(CIN2) Artículos
Files in This Item:
File Description SizeFormat 
velocityfet.pdf2,85 MBAdobe PDFThumbnail
Show simple item record

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.