English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/209834
Share/Impact:
Statistics
logo share SHARE   Add this article to your Mendeley library MendeleyBASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:

Title

Dual-Gate Organic Field-Effect Transistor for pH Sensors with Tunable Sensitivity

AuthorsPfattner, Raphael ; Foudeh, Amir M.; Chen, Shucheng; Niu, Weijun; Matthews, James R.; He, Mingqian; Bao, Zhenan
KeywordsDual-gate organic field-effect transistors
pH sensors
Silicon monoxide
Silicon monoxide
Tunable sensitivity
Issue DateJan-2019
PublisherWiley-VCH
CitationAdvanced Electronic Materials 5(1): 1800381 (2019)
AbstractDual‐gate field‐effect transistors (FETs) based on organic semiconductor polymer and SiOx as the topmost active sensing layer permit monitoring of pH in physiologically relevant conditions in a fast and reversible fashion. Beyond that, due to the bottom gate‐induced field effect, such sensors exhibit tunable sensitivity and provide faster continuous measurements compared to conventional bulky glass bulb pH sensors. pH response of bare SiOx is evaluated independently by means of voltmeter measurements. When assembled in dual‐gate architecture, the pH response of FET devices scales in agreement with the theoretical model, which assumes capacitive coupling, exhibiting an amplification of up to 10. This opens up the possibility for reversible and reliable sensing based on organic semiconductors well beyond pH sensors.
Publisher version (URL)http://dx.doi.org/10.1002/aelm.201800381
URIhttp://hdl.handle.net/10261/209834
ISSN2199-160X
Appears in Collections:(ICMAB) Artículos
Files in This Item:
File Description SizeFormat 
Pfattner_AdvElectrMat_2019_editorial.pdf3,12 MBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.