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LO phonon–plasmon coupled modes and carrier mobilities in heavily Se-doped Ga(As, N) thin films

AutorIbáñez Insa, Jordi ; Alarcón-Lladó, Esther ; Cuscó, Ramón ; Artús, Lluís ; Fowler, D.; Patanè, A.; Uesugi, K.; Suemune, I.
Fecha de publicaciónene-2009
CitaciónJournal of Materials Science - Materials in Electronics 20: S425–S429 (2009)
ResumenWe use Raman scattering to study the LO–plasmon coupled modes (LOPCMs) of n-type GaAs1−x N x epilayers grown by molecular beam epitaxy (0.1% ≤ x ≤ 0.36%). We find that the LOPCMs are heavily damped in n-GaAs1−x N x even for x as low as 0.1%. From a lineshape analysis based on the hydrodynamical model, we evaluate the lifetime of the LOPCMs in our samples. We compare the values thus obtained with the corresponding Hall mobilities. We find that both quantities decrease strongly with increasing x, which can be attributed to N-related alloy scattering of conduction band electrons in the GaAs1−x N x alloy.
Versión del editorhttp://www.springerlink.com/content/k7493xwu04126770/fulltext.html
ISSN0957-4522 (Print)
1573-482X (Online)
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