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Título: | Dilute (In,Ga)(As,N) thin films grown by molecular beam epitaxy on (100) and non-(100) GaAs substrates: a Raman-scattering study |
Autor: | Ibáñez Insa, Jordi CSIC ORCID ; Alarcón-Lladó, Esther CSIC; Cuscó, Ramón CSIC ORCID ; Artús, Lluís CSIC ORCID ; Henini, Mohamed; Hopkinson, Mark | Fecha de publicación: | ene-2009 | Editor: | Springer Nature | Citación: | Journal of Materials Science - Materials in Electronics J Mater Sci: Mater Electronics 20: S116–S119(2009) | Resumen: | We use Raman scattering to investigate a series of In x Ga1–x As1–y N y epilayers (x ∼ 20% and y ∼ 3%) coherently grown on (100) and on (N11) GaAs substrates (N = 1, 3, 4, and 5). We use biaxial-strain theory to evaluate the effect of N alloying on the frequency of the GaAs-like phonon optical modes of dilute InGaAsN. We find that N alloying reduces the TO–LO splitting of the GaAs-like modes. We investigate the effect of substrate orientation on the N-related vibrational modes. Our results suggest that the growth direction does not affect substantially the local bonding of N atoms in InGaAsN. | Versión del editor: | http://www.springerlink.com/content/nn702m6tv604ph20/fulltext.html | URI: | http://hdl.handle.net/10261/20968 | DOI: | 10.1007/s10854-007-9462-7 | ISSN: | 0957-4522 | E-ISSN: | 1573-482X |
Aparece en las colecciones: | (Geo3Bcn) Artículos |
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