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Tunable photodetectors via in situ thermal conversion of TiS3 to TiO2

AuthorsGhasemi, Foad; Frisenda, Riccardo; Flores, Eduardo; Papadopoulos, Nikos; Biele, Robert; Perez de Lara, David; Zant, Herre S. J. van der; Watanabe, Kenji; Taniguchi, Takashi; D’Agosta, Roberto; Ares, José R.; Sánchez, Carlos ; Ferrer, Isabel J.; Castellanos-Gómez, Andrés
Keywords2D materials
Raman spectroscopy
Issue Date9-Apr-2020
PublisherMultidisciplinary Digital Publishing Institute
CitationNanomaterials 10(4): 711 (2020)
AbstractIn two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS<sub>3</sub>), a layered semicon-ductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectron-ic properties and its direct bandgap of 1.1 eV. Heating TiS<sub>3</sub> in air above 300 °C gradually converts it into TiO<sub>2</sub>, a semiconductor with a wide bandgap of 3.2 eV with applications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of indi-vidual TiS<sub>3</sub> nanoribbons and its influence on the optoelectronic properties of TiS<sub>3</sub>-based photodetec-tors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS<sub>3</sub> devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO<sub>2-x</sub>S<sub>x</sub>) when in-creasing the amount of oxygen and reducing the amount of sulfur.
Publisher version (URL)https://doi.org/10.3390/nano10040711
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